PART |
Description |
Maker |
BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
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BLF7G22LS-100P |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
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NXP Semiconductors N.V.
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BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
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NXP Semiconductors N.V.
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BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
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NXP Semiconductors N.V.
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
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NXP Semiconductors N.V.
|
BLF7G27L-140 |
Power LDMOS transistor
|
Philips Semiconductors
|
LX723-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF7G24L-160P BLF7G24LS-160P |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF8G27LS-150GV BLF8G27LS-150V |
Power LDMOS transistor
|
NXP Semiconductors
|
MRFE6VS25N MRFE6VS25NR1 |
RF Power LDMOS Transistor
|
Freescale Semiconductor, Inc
|
BLF25M612 BLF25M612G |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G21LS-160 |
Power LDMOS transistor
|
NXP Semiconductors
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